EEPROM-backed FIFO memory

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United States of America Patent

PATENT NO 5353248
SERIAL NO

07868174

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A first-in, first-out (FIFO) static random access memory (SRAM) device includes EEPROM cells which provide non-volatile backup capability. The sizing of each SRAM cell is such that its associated EEPROM cell is automatically programmed via the output of the SRAM cell. Upon power-up, the EEPROM cell restores the SRAM cell to the inverse of whatever state it was in prior to the most recent EEPROM programming (before a preceding power-down). This provides non-volatility to the SRAM without a significant increase in manufacturing costs or overhead.

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Patent Owner(s)

Patent OwnerAddress
ALTERA CORPORATION (A CORPORATION OF DELAWARE)101 INNOVATION DRIVE SAN JOSE CA 95134

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gupta, Anil San Jose, CA 97 5217

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