Dry etching method
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United States of America Patent
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-
Oct 11, 1994
Issued Date -
N/A
app pub date -
Apr 2, 1990
filing date -
Sep 5, 1986
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Etching of an article is carried out by maintaining the article at a temperature at which the vapor pressure of etching gas molecules becomes equal to or higher than the pressure of etching gas and the vapor pressure of neutral radicals contained in a plasma becomes equal to or lower than the pressure of an etching gas. An etching pattern with a substantially vertical side profile and extremely small in dimensional shift from the mask can be formed at high precision.
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Cited Art Landscape
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