Hetero-epitaxial growth of non-lattice matched semiconductors
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United States of America Patent
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Oct 18, 1994
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Oct 16, 1992
filing date -
Oct 16, 1992
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Abstract
A method for growing a compound semiconductor, such as GaAs or InP, on a non-lattice matched substrate, such as Si, utilizes close-spaced vapor transport to deposit nucleation enhancing interlayer and liquid phase epitaxy to form the compound semiconductor. When used in conjunction with a growth mask, the method is also adapted to selective area epitaxy.
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