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Abstract

A new method of metallization of an integrated circuit is described. This method can be used for a first metallization to contact the semiconductor substrate regions or for a subsequent metallizations for interconnection within the integrated circuit. An insulating layer is provided over the surface of a semiconductor substrate or over a metallization layer. At least one contact opening is made through the insulating layer to the semiconductor substrate or to the metallization layer. A barrier metal layer is deposited over the surface of the substrate and within the contact opening wherein most of the barrier metal is deposited on the bottom of the contact opening rather than on the sides of the opening. A metal layer is cold sputtered over the barrier metal layer, then the metal is hot sputtered over the cold-sputtered metal layer wherein the cold and hot sputtering are continuous operations to complete the metallization of the integrated circuit.

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First Claim