Process for isotropically etching semiconductor devices
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United States of America Patent
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Oct 25, 1994
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app pub date -
Sep 14, 1993
filing date -
Sep 24, 1991
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Abstract
The etchant material of this invention comprises a chemical etchant composition including a halogen-containing feed gas and gaseous carbon dioxide. Typically, the halogen-containing feed gas is a fluorine-containing or a chlorine-containing feed gas, or both a fluorine-containing and a chlorine-containing feed gas. Preferably, the chlorine-containing feed gas comprises chlorine gas or HCl, and the fluorine-containing feed gas comprises SF.sub.6 or NF.sub.3. The fluorine-containing feed gas can also comprise CF.sub.4, or C2F.sub.6.
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