Process for isotropically etching semiconductor devices

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 5358601
SERIAL NO

08121089

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The etchant material of this invention comprises a chemical etchant composition including a halogen-containing feed gas and gaseous carbon dioxide. Typically, the halogen-containing feed gas is a fluorine-containing or a chlorine-containing feed gas, or both a fluorine-containing and a chlorine-containing feed gas. Preferably, the chlorine-containing feed gas comprises chlorine gas or HCl, and the fluorine-containing feed gas comprises SF.sub.6 or NF.sub.3. The fluorine-containing feed gas can also comprise CF.sub.4, or C2F.sub.6.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
MICRON TECHNOLOGY, INC.BOISE, ID18801

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cathey, David A Boise, ID 159 3890

Cited Art Landscape

Patent Info (Count) # Cites Year
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (4)
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ADVANCED MICRO DEVICES, INC. (1)
* 4468285 Plasma etch process for single-crystal silicon with improved selectivity to silicon dioxide 19 1983
 
MICRON TECHNOLOGY, INC. (1)
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APPLIED MATERIALS, INC. (1)
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EATON CORPORATION (1)
* 4255230 Plasma etching process 26 1980
 
Leybold Aktiengesellschaft (1)
* 4863549 Apparatus for coating or etching by means of a plasma 72 1988
* Cited By Examiner

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (1)
6403412 Method for in-situ formation of bottle shaped trench by gas phase etching 12 1999
 
Other [Check patent profile for assignment information] (1)
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MICRON TECHNOLOGY, INC. (19)
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* Cited By Examiner