Method of manufacturing semiconductor devices
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United States of America Patent
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-
Oct 25, 1994
Grant Date -
N/A
app pub date -
Nov 12, 1992
filing date -
Dec 10, 1991
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a semiconductor device having multi-layer lead conductors, lead conductors of each layer and through connections are generated by electro chemical plating process. A flat and smooth surface is provided for each layer on which lead conductor base patterns are formed. Plating lead conductors on a layer and plating through connections are executed in a separate process. And, in these platings, electrolytic current is so controlled that the growth of plating is always from the base of the plating.
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