Method for forming diamond films by vapor phase synthesis
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United States of America Patent
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Oct 25, 1994
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N/A
app pub date -
Jul 6, 1992
filing date -
Jul 9, 1991
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Expired
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Abstract
A method for forming diamond films by vapor phase synthesis comprising a process of forming the diamond films on a substrate by direct current discharge plasma, in an atmosphere of a reaction gas including a gas containing at least carbon and hydrogen, or in an atmosphere of a mixed gas containing at least a carbon-containing gas and a hydrogen gas, at a gas pressure between 0.1 and 5 Torr and a substrate temperature between 300.degree. and 1000.degree. C.
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