Thermal/mechanical buffer for HgCdTe/Si direct hybridization
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United States of America Patent
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Nov 15, 1994
Grant Date -
N/A
app pub date -
Aug 2, 1988
filing date -
Aug 2, 1988
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A Group II-VI photodetector array 12 is coupled to a silicon readout circuit 14 by means of a thermal/mechanical buffer 16 comprised of a body of material which has a characteristic thermal expansivity which is more similar to that of the thermal expansivity of the Group II-VI material than that of silicon. One suitable material is Al.sub.2 O.sub.3. The buffer has a plurality of conductive vias 18 formed therethrough, each of the conductive vias being 'bumped' at opposite ends thereof. The buffer accommodates the differing expansivities of, for example, HgCdTe and silicon, thereby relieving thermally generated stresses with a consequent improvement in the reliability of the resulting hybrid structure.
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