Importance

Loading Importance Indicators...

Abstract

A thin-film transistor comprises a first amorphous semiconductor layer acting as a channel, a second n.sup.+ amorphous semiconductor layer formed on the first amorphous semiconductor layer, a diffusion preventive layer of chromium provided between the second amorphous semiconductor layer and source/drain metal electrodes. The diffusion preventive layer is formed by removing a portion of a diffusion preventive layer forming film not being covered by a patterned resist film using a first etchant. Then, the second amorphous semiconductor layer is formed by removing a portion of a second amorphous semiconductor layer forming film not being covered by the patterned resist film or the diffusion preventive layer using a second etchant which dissolves the second amorphous semiconductor layer forming film but does not dissolve the diffusion preventive layer.

Loading the Abstract Image...

First Claim