De-coupling capacitor on the top of the silicon die by eutectic flip bonding
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United States of America Patent
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-
Nov 29, 1994
Grant Date -
N/A
app pub date -
Jun 30, 1993
filing date -
Jun 30, 1993
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A high capacitance/low inductance capacitor module. The module comprises a plurality of conductive power planes that are separated from a plurality of conductive ground planes by layers of dielectric material. The power planes each have opposite extending tabs that are offset from similar tabs extending from the ground planes and which are coupled together by layers of conductive material. Likewise, the tabs of the ground planes are coupled together by additional layers of conductive material. The corresponding power and ground planes are also coupled together by vias located throughout the module. The conductive layers couple both sides of the corresponding conductive planes and provide contact pads for further assembly to a semiconductive die. The module is attached to the semiconductive die by a plurality of gold bumps which are formed on the top surface of the die.
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