Monolithic microwave power sensor
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United States of America Patent
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-
Dec 6, 1994
Grant Date -
N/A
app pub date -
Oct 9, 1990
filing date -
Oct 9, 1990
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A monolithic integrated circuit power sensor provides a monolithic integrated circuit substrate a conversion element formed either on or in the substrate for converting microwave energy into heat, an electrically insulating dielectric layer affixed to the conversion element, and an integrated circuit, heat sensitive element formed in sufficiently close proximity to the conversion element to be thermally coupled thereto through the dielectric layer for sensing temperature changes in the conversion element.
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