Dynamic semiconductor wafer processing using homogeneous chemical vapors
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United States of America Patent
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Dec 6, 1994
Issued Date -
N/A
app pub date -
Nov 18, 1992
filing date -
May 15, 1990
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Abstract
Disclosed are methods and apparatuses for improved processing of semiconductor wafers and the like using processing chemicals, particularly hydrofluoric acid (HF) and water mixtures. Homogeneous vapor mixtures are generated from homogeneous liquid phase mixtures which are preferably recirculated, mixed and agitated. The liquid phase is advantageously circulated through a chemical chamber within the processing bowl. Exposure of wafers to vapors from the chemical chamber can be controlled by a vapor control valve which is advantageously the bottom of the processing chamber. The wafer is rotated or otherwise moved within the processing chamber to provide uniform dispersion of the homogeneous reactant vapors across the wafer surface and to facilitate vapor circulation to the processed surface. A radiative volatilization processor can be utilized to volatilize reaction by-products which form under some conditions. The processes provide efficient uniform etching with low particle count performance.
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
| Patent Owner | Address | |
|---|---|---|
| SEMITOOL INC | MONTANA MONTANA |
International Classification(s)
Inventor(s)
| Inventor Name | Address | # of filed Patents | Total Citations |
|---|---|---|---|
| Bergman, Eric J | Kalispell, MT | 97 | 1991 |
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| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|
| Fee | Large entity fee | small entity fee | micro entity fee |
|---|---|---|---|
| Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
| Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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