Method of forming "J" leads on a semiconductor device
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United States of America Patent
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Dec 27, 1994
Issued Date -
N/A
app pub date -
Jun 9, 1992
filing date -
Aug 13, 1991
priority date (Note) -
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Abstract
A method for forming a small outline 'J' lead for a semiconductor device having a main body and a lead comprises three bend steps. The lead comprises a surface attached to the body, a distal end away from the body, and a proximal area interposed between the attached surface and the distal end. The method consists of the lead bend steps of rounding the distal end of the lead in a single bend step to form an are in the distal end having a radius of between 0.030' and 0.040', the arc terminating toward the proximal area of the leads in a substantially straight lead portion. Next, the proximal area of the lead is bent close to the attached surface such that the proximal area of the lead forms an angle of between about 60.degree. and 90.degree. with the attached surface of the lead. Finally, the arc in the distal end is increased to a radius of between about 0.035' and 0.045'.
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