Silicon oxide film growing apparatus
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United States of America Patent
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Dec 27, 1994
Grant Date -
N/A
app pub date -
Jan 5, 1993
filing date -
Jan 8, 1992
priority date (Note) -
Expired
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Abstract
According to this invention, a silicon oxide film growing apparatus includes a single wafer film-forming processing tank, a post processing unit, and a wafer conveying robot. The single wafer film-forming processing tank selectively grows a silicon oxide film by a liquid-phase growing method on only a silicon oxide film on a surface of a semiconductor wafer. The post processing unit washes the surface of the semiconductor wafer. The wafer conveying robot conveys the semiconductor wafer between the film-forming processing tank and the post processing unit.
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