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Abstract

A process for making a plurality of quartz thickness shear resonators with resonating means for use in high frequency oscillators with operating frequencies of 30 MHz or greater. The invention includes grinding a single crystal quartz wafer to achieve a highly uniform thickness, thus enhancing uniformity of the resonators produced. The invention also includes etching the quartz wafer to form a plurality of resonators, each having a support structure and a much thinner etched resonating membrane cantilevered at the support structure. In addition, the design of the support structure is such that a sloped edge occurs during membrane etching between the support structure and the membrane, thus facilitating the application of electrodes extending from the support structure to the membrane. Yet another aspect of the invention is to perform a fine-tune etching during the formation and tuning of the resonating membranes, thus further enhancing the uniformity of the resonator frequencies across the wafer.

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First Claim