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Abstract

A method of manufacturing a semiconductor device having a capacitor comprises the steps of forming a silicon oxide layer on a semiconductor substrate, forming a first silicon nitride layer on the silicon oxide layer, forming a polycrystalline silicon layer as a lower electrode layer of the capacitor on the first silicon nitride layer, subjecting the polycrystalline silicon layer to the natural outside atmosphere so as to form a native oxide layer on the polycrystalline silicon layer, removing the native oxide layer to expose the polycrystalline silicon layer to an inactive gas atmosphere, Forming a second silicon nitride layer on the exposed polycrystalline silicon layer subjecting the second silicon nitride layer to the outside atmosphere so as to form a capacitor oxide layer on the polycrystalline silicon layer, the second silicon nitride layer and the capacitor oxide layer working as a dielectric layer of the capacitor, and forming an upper electrode layer of the capacitor on the capacitor oxide layer.

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First Claim