A semiconductor device capable of improving pressure-resistant and leakage-resistant characteristics of a stacked type capacitor formed on a planarized insulating layer. The semiconductor device includes a plug electrode layer 313 of at least one material selected from the group consisting of TiN, Ti, W, and WN, buried in a contact hole 311a of an interlayer insulating films 311 and extending on and along the upper surface of interlayer insulating film 311. As a result, creation of a stepped portion on platinum layer 314 constituting a capacitor lower electrode to be formed on the plug electrode 313 is prevented, and the thickness of a PZT film 315 to be formed on platinum layer 314 is not disadvantageously made thin at the stepped portion. Therefore, the space between a capacitor upper electrode 316 and platinum layer 314 constituting the capacitor lower electrode can not be made narrow, and an electric field between platinum layer 314 and capacitor upper electrode 316 is made uniform, enhancing pressure-resistant and leakage-resistant characteristics. Also, a silicification reaction of platinum layer 314 is prevented due to plug electrode layer 313. In addition, when plug electrode layer 313 is formed of Ti or TiN, adhesion of plug electrode layer 313 and interlayer insulating film 311 is improved, and thus separation of platinum layer 314 is prevented.
* 5920453 Completely encapsulated top electrode of a ferroelectric capacitor
* 5864932 Partially or completely encapsulated top electrode of a ferroelectric capacitor
* 6027947 Partially or completely encapsulated top electrode of a ferroelectric capacitor
* 6211542 Completely encapsulated top electrode of a ferroelectric capacitor using a lead-enhanced escapsulation layer
6249014 Hydrogen barrier encapsulation techniques for the control of hydrogen induced degradation of ferroelectric capacitors in conjunction with multilevel metal processing for non-volatile integrated circuit memory devices
6174735 Method of manufacturing ferroelectric memory device useful for preventing hydrogen line degradation
6242299 Barrier layer to protect a ferroelectric capacitor after contact has been made to the capacitor electrode
* 6150184 Method of fabricating partially or completely encapsulated top electrode of a ferroelectric capacitor
6201726 Ferroelectric memory device structure useful for preventing hydrogen line degradation
6358755 Ferroelectric memory device structure useful for preventing hydrogen line degradation
6613586 HYDROGEN BARRIER ENCAPSULATION TECHNIQUES FOR THE CONTROL OF HYDROGEN INDUCED DEGRADATION OF FERROELECTRIC CAPACITORS IN CONJUNCTION WITH MULTILEVEL METAL PROCESSING FOR NON-VOLATILE INTEGRATED CIRCUIT MEMORY DEVICES
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