Semiconductor device having a ferroelectric capacitor with a planarized lower electrode

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 5382817
SERIAL NO

08020082

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A semiconductor device capable of improving pressure-resistant and leakage-resistant characteristics of a stacked type capacitor formed on a planarized insulating layer. The semiconductor device includes a plug electrode layer 313 of at least one material selected from the group consisting of TiN, Ti, W, and WN, buried in a contact hole 311a of an interlayer insulating films 311 and extending on and along the upper surface of interlayer insulating film 311. As a result, creation of a stepped portion on platinum layer 314 constituting a capacitor lower electrode to be formed on the plug electrode 313 is prevented, and the thickness of a PZT film 315 to be formed on platinum layer 314 is not disadvantageously made thin at the stepped portion. Therefore, the space between a capacitor upper electrode 316 and platinum layer 314 constituting the capacitor lower electrode can not be made narrow, and an electric field between platinum layer 314 and capacitor upper electrode 316 is made uniform, enhancing pressure-resistant and leakage-resistant characteristics. Also, a silicification reaction of platinum layer 314 is prevented due to plug electrode layer 313. In addition, when plug electrode layer 313 is formed of Ti or TiN, adhesion of plug electrode layer 313 and interlayer insulating film 311 is improved, and thus separation of platinum layer 314 is prevented.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddressTotal Patents
MITSUBISHI DENKI KABUSHIKI KAISHATOKYO5930

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Itoh, Hiromi Hyogo, JP 22 701
Kashihara, Keiichiro Hyogo, JP 40 636

Cited Art Landscape

Patent Info (Count) # Cites Year
 
RAMTRON INTERNATIONAL CORPORATION (1)
* 5005102 Multilayer electrodes for integrated circuit capacitors 145 1989
 
WEEDEN CAPITAL PARTNERS, L.P., 180 MAIDEN LANE, NEW YORK, NEW YORK 10038 (1)
* 5046043 Ferroelectric capacitor and memory cell including barrier and isolation layers 165 1987
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
Other [Check patent profile for assignment information] (1)
* 2004/0222,525 Advanced VLSI metallization 5 2004
 
SEIKO EPSON CORPORATION (3)
* 2006/0043,452 Ferroelectric memory and its manufacturing method 6 2005
7994556 Semiconductor memory device having amorphous contact plug 1 2007
* 2007/0194,361 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE 3 2007
 
CYPRESS SEMICONDUCTOR CORPORATION (3)
9092582 Low power, low pin count interface for an RFID transponder 0 2010
8723654 Interrupt generation and acknowledgment for RFID 0 2010
* 2015/0206,893 DAMASCENE OXYGEN BARRIER AND HYDROGEN BARRIER FOR FERROELECTRIC RANDOM-ACCESS MEMORY 1 2014
 
MICRON TECHNOLOGY, INC. (6)
* 5895268 High pressure nitridation of tungsten 4 1996
6660610 Devices having improved capacitance and methods of their fabrication 1 1996
* 6838353 Devices having improved capacitance and methods of their fabrication 2 1999
7205599 Devices having improved capacitance 0 1999
7943505 Advanced VLSI metallization 1 2004
* 7126205 Devices having improved capacitance and methods of their fabrication 1 2004
 
SAMSUNG ELECTRONICS CO., LTD. (4)
* 5774327 High dielectric capacitors 18 1996
* 6025223 Methods of forming high dielectric capacitors 8 1998
8257984 Ferroelectric capacitor and method of manufacturing the same 0 2005
* 2006/0102,944 Ferroelectric capacitor and method of manufacturing the same 0 2005
 
JX NIPPON MINING & METALS CORPORATION (1)
* 8004082 Electronic component formed with barrier-seed layer on base material 0 2009
 
LG Semicon Co., Ltd. (1)
* 5668040 Method for forming a semiconductor device electrode which also serves as a diffusion barrier 42 1996
 
MONTEREY RESEARCH, LLC (11)
* 5920453 Completely encapsulated top electrode of a ferroelectric capacitor 20 1996
* 5864932 Partially or completely encapsulated top electrode of a ferroelectric capacitor 43 1996
* 6027947 Partially or completely encapsulated top electrode of a ferroelectric capacitor 26 1997
* 6211542 Completely encapsulated top electrode of a ferroelectric capacitor using a lead-enhanced escapsulation layer 21 1998
6249014 Hydrogen barrier encapsulation techniques for the control of hydrogen induced degradation of ferroelectric capacitors in conjunction with multilevel metal processing for non-volatile integrated circuit memory devices 84 1998
6174735 Method of manufacturing ferroelectric memory device useful for preventing hydrogen line degradation 17 1998
6242299 Barrier layer to protect a ferroelectric capacitor after contact has been made to the capacitor electrode 48 1999
* 6150184 Method of fabricating partially or completely encapsulated top electrode of a ferroelectric capacitor 25 2000
6201726 Ferroelectric memory device structure useful for preventing hydrogen line degradation 18 2000
6358755 Ferroelectric memory device structure useful for preventing hydrogen line degradation 16 2000
6613586 HYDROGEN BARRIER ENCAPSULATION TECHNIQUES FOR THE CONTROL OF HYDROGEN INDUCED DEGRADATION OF FERROELECTRIC CAPACITORS IN CONJUNCTION WITH MULTILEVEL METAL PROCESSING FOR NON-VOLATILE INTEGRATED CIRCUIT MEMORY DEVICES 23 2001
 
PS4 LUXCO S.A.R.L. (1)
* 5499207 Semiconductor memory device having improved isolation between electrodes, and process for fabricating the same 59 1994
 
RENESAS ELECTRONICS CORPORATION (4)
* 5883781 Highly-integrated thin film capacitor with high dielectric constant layer 17 1996
* 5943547 Method of forming highly-integrated thin film capacitor with high dielectric constant layer 15 1997
* 6081417 Capacitor having a ferroelectric layer 16 1998
6501113 Semiconductor device with capacitor using high dielectric constant film or ferroelectric film 2 2001
 
KABUSHIKI KAISHA TOSHIBA (4)
* 6847073 Semiconductor device using ferroelectric film in cell capacitor, and method for fabricating the same 7 2003
* 2004/0094,790 Semiconductor device using ferroelectric film in cell capacitor, and method for fabricating the same 3 2003
* 7253463 Semiconductor memory device and method of manufacturing the same 5 2005
* 2006/0054,948 Semiconductor memory device and method of manufacturing the same 3 2005
 
HYNIX SEMICONDUCTOR INC. (2)
* 6818935 Semiconductor device and method for fabricating the same 12 2002
* 2003/0057,445 Semiconductor device and method for fabricating the same 2 2002
 
SYMETRIX CORPORATION (1)
* 6104049 Ferroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making same 29 1999
 
NEC ELECTRONICS CORPORATION (1)
* 5514910 Semiconductor device having multi-level interconnection structure 11 1994
 
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (1)
* 5637527 Method of forming a charge-storage electrode of semiconductor device 32 1996
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (7)
* 5914851 Isolated sidewall capacitor 17 1995
* 5712759 Sidewall capacitor with L-shaped dielectric 11 1995
* 5633781 Isolated sidewall capacitor having a compound plate electrode 33 1995
* 5585998 Isolated sidewall capacitor with dual dielectric 34 1995
* 5701647 Method for making an isolated sidewall capacitor having a compound plate electrode 22 1997
* 6027966 Isolated sidewall capacitor 12 1997
6255157 Method for forming a ferroelectric capacitor under the bit line 9 1999
 
POLARIS INNOVATIONS LIMITED (1)
* 6359296 Circuit arrangement with at least one capacitor 2 1999
 
U.S. BANK NATIONAL ASSOCIATION (1)
* 2004/0229,455 Advanced VLSI metallization 0 2004
 
LATTICE SEMICONDUCTOR CORPORATION (1)
* 6075293 Semiconductor device having a multi-layer metal interconnect structure 15 1999
 
RAMTRON INTERNATIONAL CORPORATION (1)
6281023 Completely encapsulated top electrode of a ferroelectric capacitor using a lead-enhanced encapsulation layer 39 2001
 
U.S. PHILIPS CORPORATION (2)
* 5744832 Semiconductor device having a ferroelectric memory element with a lower electrode provided with an oxygen barrier 45 1995
* 6140173 Method of manufacturing a semiconductor device comprising a ferroelectric memory element 18 1998
 
GLOBALFOUNDRIES INC. (1)
* 6984591 Precursor source mixtures 185 2000
 
BLACKBERRY LIMITED (5)
* 2008/0001,292 Hermetic Passivation Layer Structure for Capacitors with Perovskite or Pyrochlore Phase Dielectrics 9 2007
8361811 Electronic component with reactive barrier and hermetic passivation layer 0 2008
* 2009/0121,316 Electronic Component with Reactive Barrier and Hermetic Passivation Layer 2 2008
8822235 Electronic component with reactive barrier and hermetic passivation layer 0 2012
8664704 Electronic component with reactive barrier and hermetic passivation layer 0 2013
 
Cardiac Pacemakers, Inc. (1)
6198123 Shielded integrated circuit capacitor connected to a lateral transistor 64 1997
 
Ultrasource, Inc. (8)
* 6998696 Integrated thin film capacitor/inductor/interconnect system and method 8 2003
* 2004/0080,021 Integrated thin film capacitor/inductor/interconnect system and method 15 2003
7327582 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2005/0175,938 Integrated thin film capacitor/inductor/interconnect system and method 3 2005
7425877 Lange coupler system and method 1 2005
* 2005/0162,236 Lange coupler system and method 2 2005
7446388 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2006/0097,344 Integrated thin film capacitor/inductor/interconnect system and method 0 2005
 
MITSUBISHI DENKI KABUSHIKI KAISHA (2)
* 6049103 Semiconductor capacitor 15 1996
* 5939744 Semiconductor device with x-ray absorption layer 5 1997
 
TEXAS INSTRUMENTS INCORPORATED (5)
* 5612574 Semiconductor structures using high-dielectric-constant materials and an adhesion layer 83 1995
* 6600183 Integrated circuit capacitor and memory 16 1998
* 2005/0145,908 High polarization ferroelectric capacitors for integrated circuits 13 2003
7935543 Method of forming PZT ferroelectric capacitors for integrated circuits 3 2009
* 2009/0233,382 High Polarization Ferroelectric Capacitors for Integrated Circuits 0 2009
 
ROHM CO., LTD. (1)
* 6094369 Ferroelectric nonvolatile memory element having capacitors of same dielectric constant and method thereof 17 1998
 
Radiant Technologies, Inc. (1)
* 5440173 High-temperature electrical contact for making contact to ceramic materials and improved circuit element using the same 47 1993
 
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (1)
* 2002/0037,624 Capacitor and method for fabricating semiconductor device 9 2001
 
INTELLECTUAL DISCOVERY CO., LTD. (1)
* 6348708 Semiconductor device utilizing a rugged tungsten film 2 1996
* Cited By Examiner