Tight control of resistor valves in a SRAM process
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United States of America Patent
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-
Jan 24, 1995
Issued Date -
N/A
app pub date -
Jul 7, 1994
filing date -
Nov 16, 1992
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method of forming a polycrystalline silicon resistor includes the step of forming a resistor region of poly, the region being doped per a desired resistivity of the resistor. The exposed top and side portions of the poly region are completely covered with an insulating oxide. A predetermined portion of the oxide is etched away, resulting in a portion of the oxide completely covering the resistor poly. The resistor poly region and oxide are covered (masked) with photoresist, the mask extending beyond the sides of the poly. The remaining oxide in the area outside of the mask is etched away, and the photoresist is removed.
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