Method to form a low resistant bond pad interconnect
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United States of America Patent
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Jan 24, 1995
Grant Date -
N/A
app pub date -
Oct 1, 1993
filing date -
Oct 1, 1993
priority date (Note) -
In Force
status (Latency Note)
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Abstract
The present invention develops a bond pad interconnect in an integrated circuit device, by forming an aluminum pad; bonding a metal layer (such as copper (Cu), nickel (Ni), tungsten (W), gold (Au), silver (Ag) or platinum (Pt)) or a metal alloy (such as titanium nitride) to the aluminum bond pad by chemical vapor deposition or by electroless deposition; and adhering a conductive epoxy film to the metal layer, thereby forming a low resistive bond pad interconnect.
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