Antifuse circuit structure for use in a field programmable gate array and method of manufacture thereof
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United States of America Patent
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Jan 24, 1995
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N/A
app pub date -
Apr 2, 1993
filing date -
Jan 17, 1991
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Abstract
An antifuse structure particularly suitable for field programmable gate arrays is presented. In most present day processes the antifuse structure is formed with a refractory metal layer, amorphous silicon layer and refractory metal layer sandwiched between two metal interconnection lines. Unprogrammed resistances of very high values, programmed resistances of very low values, short programming times and desirable programming voltages are among the advantages realized.
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