Method of manufacturing polysilicon film including recrystallization of an amorphous film
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United States of America Patent
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Jan 31, 1995
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N/A
app pub date -
Jun 19, 1992
filing date -
Jun 21, 1991
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Abstract
A method of fabricating a polysilicon film whose crystal grain size can be controlled in a wide range and which has a large surface area and an application thereof to a DRAM are disclosed. In polycrystallizing an amorphous silicon film having a substantially clean surface, nucleation and crystal growth are performed under different conditions. With this method, crystal grain density and crystal grain size can be controlled easily, causing a polysilicon film having finer grains to be formed concomitant with reduction of capacitor area due to increase of integration density of DRAM.
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