Method of manufacturing flat inductance element
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United States of America Patent
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Feb 7, 1995
Grant Date -
N/A
app pub date -
Mar 4, 1993
filing date -
Mar 4, 1992
priority date (Note) -
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Abstract
A method of manufacturing a planar inductance element, including the steps of forming a thermal oxide film, a magnetic film, a first insulating interlayer, a planar coil, and a second insulating interlayer on a first semiconductor substrate, forming an insulating film and a magnetic film on a second semiconductor substrate, and adhering the first and the second semiconductor substrates such that the coil side of the first semiconductor substrate faces the magnetic film side of the second semiconductor substrate. According to this method, a stress generated by stacking thin films can be reduced compared with that of a conventional inductance element. Therefore, a high-frequency loss can be reduced, and a quality coefficient Q can be increased.
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