Field controlled thyristor
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United States of America Patent
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Feb 7, 1995
Grant Date -
N/A
app pub date -
Jan 5, 1994
filing date -
Jan 5, 1994
priority date (Note) -
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Abstract
A readily manufacturable field controlled thyristor with a first semiconductor region of n-type conductivity, a second semiconductor region of p-type in contact with said first region, a void penetrating through said first and second semiconductor regions, a fourth semiconductor region of n-type forming a channel adjacent to said void, a fifth semiconductor region, of p-type, in contact with said third region. The device has a large tolerance for deviations in process parameter precision and accuracy, which enables the device to be produced at a low cost.
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