Thin film capacitors

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United States of America Patent

PATENT NO 5390072
SERIAL NO

07945891

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Abstract

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The invention relates to a method for forming a high capacitance thin film capacitor comprising forming an amorphous layer of a dielectric material on the surface of a polycrystalline layer of said dielectric material and arranging the resulting double layer between upper and lower electrodes. The invention further comprises dielectric articles such as capacitors formed in accordance with the method of the invention and includes their use in an electronic circuit.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
ROUND ROCK RESEARCH, LLCBOISE, ID2853
THE RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORKALBANY, NY908

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Anderson, Wayne A Hamburg, NY 8 278
Hamilton, Robert S Youngstown, NY 11 282
Jia, Quanxi Buffalo, NY 66 708
Shi, Zhiqing Buffalo, NY 5 58

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