Low temperature method for synthesizing diamond with high quality by vapor phase deposition
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United States of America Patent
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Feb 21, 1995
Grant Date -
N/A
app pub date -
Apr 1, 1992
filing date -
Apr 1, 1991
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Expired
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Abstract
A diamond film deposited on a substrate heated at less than 400.degree. C. in vapor phase from material gas including hydrogen gas and hydrocarbon gas often incurs low strength, low abrasion resistance, and opacity owing to high concentration of non-diamond ingredients. The inventors have discovered that inclusion of nitrogen gas in material gas is likely to raise the concentration of non-diamond ingredients. Good diamond film of good quality shall be obtained by synthesizing from the material gas in which the nitrogen concentration is less than 1000 ppm. The smaller the nitrogen concentration is suppressed, the higher the quality of diamond rises.
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