Burst-mode DRAM

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United States of America Patent

PATENT NO 5392239
SERIAL NO

08059029

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A dynamic random access memory (DRAM) circuit operates in burst mode when a row address strobe (RAS) signal is applied while an output enable/burst enable signal is also applied thereto. During burst mode, a column address strobe (CAS) signal is toggled to access digital data from sequential column addresses within a given row.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677 16677

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ishii, Takatoshi Sunnyvale, CA 68 1498
Margulis, Neal D Santa Clara, CA 16 1667

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