Ultra high purity vapor phase treatment
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United States of America Patent
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Mar 7, 1995
Grant Date -
N/A
app pub date -
Nov 15, 1993
filing date -
Nov 13, 1992
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Abstract
A semiconductor wafer vapor phase treatment method and apparatus for dissolving an insulating film formed on a semiconductor wafer at a high speed and high purity. A liquid reagent is heated and vaporized to obtain reagent vapors capable of dissolving an object to be treated. The reagent vapors are passed through a hydrophobic porous film to intercept mists having a diameter greater than a predetermined value and obtain high purity reagent vapors. The purified reagent vapors are supplied to the cooled object. The vapors which dissolved the object are liquidized to generate droplets.
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