Triamine positive photoresist stripping composition and post-ion implantation baking
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United States of America Patent
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Mar 21, 1995
Issued Date -
N/A
app pub date -
Apr 6, 1992
filing date -
Jul 30, 1987
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Abstract
A stripping composition for removing positive organic photoresist from a substrate, such as a semiconductor wafer, contains a triamine, such as diethylene triamine, and a nonpolar or polar organic solvent, such as N-methyl pyrrolidone. This composition will remove positive photoresist from semiconductor wafers, even after ion implantation into the wafers through the positive photoresist. The wafers are immersed in the composition, for example, at a temperature of 110.degree. C. for five minutes, in an ultrasonic bath after heavy ion implantation doses through the photoresist, such as 1.times.10.sup.16 ions/cm.sup.2, for complete removal of the photoresist. Prebaking the photoresist at a temperature of between about 150.degree. and 220.degree. C. for a time of from about 15 minutes to about 30 minutes, prior to stripping the positive organic photoresist layer with the triamine, enhances the removal.
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