Method for self-aligned punchthrough implant using an etch-back gate
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United States of America Patent
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Mar 21, 1995
Grant Date -
N/A
app pub date -
Jun 23, 1993
filing date -
Jun 23, 1993
priority date (Note) -
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Abstract
A self-aligned MOSFET incorporating a punchthrough implant, and the method for forming such a transistor. A dielectric layer is used as a hard mask over a semiconductor substrate. A portion of the dielectric layer is removed to expose a region of the semiconductor substrate. A punchthrough implant is made with the remaining portion of the dielectric layer acting as a mask layer such that the doping concentration is raised by the punchthrough implant only in the exposed region of the semiconductor substrate. A doped layer of polysilicon is formed over the region into which the implant was made to provide a self-aligned gate over the highly doped region. A source and drain are formed on opposite sides of the doped region. A protective layer is formed over the device and metallized contacts are formed to the source, drain, and gate.
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