Method of measuring junction temperature
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United States of America Patent
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Mar 28, 1995
Grant Date -
N/A
app pub date -
Oct 13, 1992
filing date -
Feb 10, 1992
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The present invention relates to a method of measuring junction temperature of a diode junction within a semiconductor device. The method has the steps of measuring current/voltage characteristics for various diodes at room temperature, determining an ideal factor for each diode, changing the temperature of the diodes to a selected temperature, remeasuring current/voltage characteristics for each diode, and comparing the measurements that have been made so as to obtain a temperature coefficients. The method also has the steps of measuring, at room temperature, a current/voltage characteristic of a diode to be utilized, determining an ideal factor from the measured current/voltage characteristic, determining a temperature coefficient corresponding to the ideal factor of by performing a linear interprelation between the ideal factors obtained for the various diodes, the ideal factor obtained for the diode, and the temperature coefficients of the various diodes, placing the diode where it will be used, measuring the current/voltage characteristic of the diode, determining the junction temperature of the diode from the temperature coefficient of the various diodes, the current/voltage characteristic of the diode at room temperature and where it will be used.
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