Functional thin film member

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United States of America Patent

PATENT NO 5403673
SERIAL NO

07848358

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Abstract

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A functional thin film member is composed of an insulating substrate; a first single crystal thin film layer which contains at least one atom component of Si or Ge, formed on the insulating substrate; an intermediate layer with a cubic crystal system and a lattice constant difference of 15% or less with respect to the lattice constant of the single crystal thin film layer, formed on said single crystal thin film layer; and a second single crystal thin film layer of an oxide formed on the intermediate layer. The first single crystal thin film layer may include crystal orientations suitable for the properties of functional members to be provided above the single crystal thin film layer on an identical plane of the surface of the single crystal thin film layer, and the intermediate layer may be formed in at least one portion of the single crystal thin film layer, corresponding to any of the crystal orientations. In this case, a functional element utilizing the second single crystal thin film layer; and a passive or active device which is formed on the first single crystal thin film layer is electrically or optically connected to the functional element or the insulating substrate.

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Patent Owner(s)

Patent OwnerAddress
RICOH COMPANY LTDTOKYO 143-8555
RICOH RESEARCH INSTITUTE OF GENERAL ELECTRONICS CO LTDNO 5-10 AZA YOKATAKAMI TAKADATE KUMANODO NATORI-SHI MIYAGI-KEN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Haga, Koichi Miyagi, JP 49 633
Itoh, Akihiro Miyagi, JP 83 1251
Miura, Hiroshi Natori, JP 182 1299

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