Method for producing a light emitting diode having transparent substrate
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United States of America Patent
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Apr 4, 1995
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app pub date -
Feb 10, 1994
filing date -
Feb 10, 1993
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Abstract
A method for producing a light emitting diode includes the steps of: forming a first semiconductor multilayer on a first semiconductor substrate having a first conductivity type; forming a light emitting layer on the first semiconductor multilayer; forming a second semiconductor multilayer; disposing a second substrate which is transparent to light emitted from the light emitting layer on the second semiconductor multilayer; and bonding the second substrate and the second semiconductor multilayer through direct bonding with heating a vicinity of an interface between the second substrate and the second semiconductor multilayer.
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