SOI transistor threshold optimization by use of gate oxide having positive charge
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United States of America Patent
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Apr 18, 1995
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app pub date -
Jun 29, 1993
filing date -
Jun 29, 1993
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Abstract
Threshold optimization for SOI transistors is achieved through the formation of a layer of positive charge within the gate to correspond to the positive polarity formed in the substrate by ion implantation for threshold voltage control. A positive charge layer is formed by furnishing sulfur ions on the substrate before growth of an oxide to form a portion of the gate oxide. The sulfur will form a charge layer on the surface of the oxide, and an additional oxide is then deposited on the same to form the gate oxide as a sandwich with the positive charge layer in the same.
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