Semiconductor device, an image sensor device, and methods for producing the same
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United States of America Patent
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-
Apr 18, 1995
Grant Date -
N/A
app pub date -
Oct 4, 1993
filing date -
Oct 2, 1992
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A semiconductor device according to the present invention includes: a light-transmitting substrate having a first surface and a second surface; a circuit conductor layer formed on the first surface of the light-transmitting substrate; a semiconductor chip having electrodes formed on a surface thereof, the semiconductor device being mounted face-down on the first surface of the light-transmitting substrate; a photo-thermal cross-linkable insulating resin layer for fixing the semiconductor chip on the light-transmitting substrate; a plated metal layer formed on at least a portion of the circuit conductor layer, the electrodes of the semiconductor chip being connected to the circuit conductor layer through the plated metal layer; an alloy layer formed in an abutting portion between each plated metal layer and the circuit conductor layer; and a second alloy layer formed in an abutting portion between each electrode and each plated metal layer, the alloy layers being formed by melting and recoagulating the plated metal layer upon the circuit conductor layer.
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