Vertical structure to minimize settling times for solid state light detectors
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United States of America Patent
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Apr 18, 1995
Grant Date -
N/A
app pub date -
Dec 1, 1993
filing date -
Dec 1, 1993
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A vertical semiconductor radiation detector structure is described in which a suction diode, formed by deposition of p+ on a substrate or epitaxial layer and subsequent up-diffusion during epitaxial layer deposition, surrounds the active area of the radiation detector. The suction diode removes the slow diffusion currents thereby reducing the settling time of the radiation detector to an acceptable level.
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