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Abstract

A thermoelectric cooling device for a thermoelectric refrigerator is described. The device is composed of p-type and n-type semiconductor layers, a first inner heat conductor, a first outer heat conductor, a second inner heat conductor, and a second outer heat conductor. The p-type and n-type semiconductor layers are electrically connected in series via the electrodes. The p-type and n-type semiconductor layers have a specific average thickness. The average figures of merit of the p-type and n-type semiconductor layers are controlled to a particular value. The thermal conductances of the first and second, inner and outer heat conductors fall within specific ranges, respectively. The coefficient of performance defined in terms of the ratio of the quantity of absorbed heat to inputted power is at least 0.6. Also described are a process for the fabrication of a semiconductor suitable for use in the thermoelectric cooling device and also a thermoelectric refrigerator using the thermoelectric cooling device.

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