Optical end point detection methods in semiconductor planarizing polishing processes
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United States of America Patent
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May 9, 1995
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N/A
app pub date -
Jan 6, 1994
filing date -
Jan 6, 1994
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Abstract
A semiconductor processing method of detecting polishing end point from a polishing planarization process includes: a) impinging laser light onto an area of an outermost surface of a semiconductor substrate at an angle of incidence of at least 70.degree. from a line normal relative to the substrate (at least 60.degree. for s-polarized light), the impinged laser light predominantly reflecting off the area as opposed to transmitting therethrough; b) measuring intensity of the light reflected off the area; c) polishing the substrate outermost surface; d) repeating step 'a' then step 'b'; and e) comparing a prior measured intensity of reflected light with a later measured intensity of reflected light to determine a change in degree of planarity of the semiconductor substrate outermost surface as a result of polishing.
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