Method of making self-aligned MOSFET
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United States of America Patent
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May 9, 1995
Grant Date -
N/A
app pub date -
Apr 26, 1994
filing date -
Apr 26, 1994
priority date (Note) -
Expired
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Abstract
This invention describes a device structure and a method of forming the device structure using a polysilicon spacer formed on the edges of the gate electrode forming a gate structure with a cavity. The channel area is self aligned through this cavity. A fully overlapped Light-Doped-Drain structure is used to improve device characteristics for submicron devices. A deep boron implant region, self aligned through the gate structure, is used to improve punch through voltage.
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