Method for producing an insulating trench in an SOI substrate
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United States of America Patent
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-
May 16, 1995
Grant Date -
N/A
app pub date -
Aug 15, 1994
filing date -
Sep 27, 1993
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method is provided for producing an insulation trench in an SOI substrate having a monocrystalline silicon layer and an insulating layer, a trench that extends onto the insulating layer and whose cross-section at the surface of the insulating layer is widened by under-etchings of the monocrystalline layer by etching into the monocrystalline silicon layer. A silicon structure is formed that at least covers the sidewalls of the trench and fills the under-etchings. The silicon structure is recrystallized and at least partially oxidized in a temperature step. The trench is filled with an insulation structure.
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