Method of controlling photoemission from porous silicon using ion implantation
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 30, 1995
Grant Date -
N/A
app pub date -
Sep 9, 1993
filing date -
Sep 9, 1993
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
This invention describes a method of controlling light emission from porous silicon and porous silicon devices using ion implantation. The emitted light intensity can be either selectively increased or decreased by suitable processing of the silicon prior to the fabrication of the porous layer. Amorphizing the silicon prior to the fabrication of the porous layer quenches the light emission. Ion implantation with doses below the amorphization level enhances the intensity of the emitted light of the subsequently fabricated porous layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully