Method of producing a resistor in an integrated circuit
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United States of America Patent
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May 30, 1995
Grant Date -
N/A
app pub date -
Apr 11, 1994
filing date -
Apr 11, 1994
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The present method of forming a resistor as part of an integrated circuit includes a first masking step which blocks the resistor area of the integrated circuit from plasma etchant, with such plasma etchant meanwhile being used to define small line widths of, for example, metalization. Subsequent thereto, another layer of photoresist is applied to allow wet etching of the area of metalization above the resistor, meanwhile blocking such wet etchant from areas previously plasma etched.
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