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Abstract

Deposition of a hard film of Ti-Si-N composite material on a substrate is carried out by using a source of evaporation possessing a composition of Ti.sub.a Si.sub.b (wherein 'a' and 'b' stand for atomic percentages respectively falling in the ranges of 75 at % .ltoreq.a.ltoreq.85 at % and 15 at %.ltoreq.b.ltoreq.25 at %, providing a+b=100 at %). Deposition is effected by a sputtering process or ion plating process in an atmosphere of an inert gas containing a nitrogen-containing reaction gas while controlling the feed rate of the reaction gas into a chamber in such a manner that the partial pressure of nitrogen is kept constant or varied continuously or stepwise. By this method there can be obtained a film having fine TiN crystalline particles uniformly dispersed in the matrix phase of Ti-Si amorphous metal or a film of functionally gradient structure in which the ratio of fine TiN crystalline particles dispersed in the matrix phase increases continuously or stepwise in the direction of thickness of the film.

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First Claim