Method of forming vias through two-sided substrate

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United States of America Patent

PATENT NO 5424245
SERIAL NO

08177350

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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An integrated circuit substrate (26) is formed with active circuit elements (24, 32) on first and second surfaces of the substrate. The active circuit elements are interconnected with though-substrate vias (28) to minimize signal routing and reduce propagation delay. The through-substrate vias may be formed with a plurality of holes (52) through the IC substrate. A dielectric layer (54) is deposited on the surface of the IC substrate and through the holes. A conductive layer (56) is deposited through the holes to form the through-substrate vias. The dielectric layer is removed from the surface of the IC substrate to leave the through-substrate vias isolated from the IC substrate by the dielectric layer. A second substrate (26) is formed as described and the two substrates are joined as a two-sided chip (21) with active circuit elements on both sides interconnected by through-substrate vias.

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Patent Owner(s)

  • FREESCALE SEMICONDUCTOR, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gurtler, Richard W Mesa, AZ 13 474
Pearse, Jeffrey Chandler, AZ 21 553
Wilson, Syd R Phoenix, AZ 17 690

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