Multiquantum barrier laser having high electron and hole reflectivity of layers
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 13, 1995
Grant Date -
N/A
app pub date -
Mar 17, 1994
filing date -
Mar 18, 1993
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
It is an object of the present invention to provide a highly efficient semiconductor laser unit having excellent temperature characteristics, in which electrons or holes are suppressed from overflowing from the active layer to the cladding layers while the threshold of current density is maintained low. The present invention is to provide a semiconductor laser unit fundamentally composed of an active layer and cladding layers in which the active layer is interposed between the cladding layers the semiconductor laser unit comprising: a multiquantum barrier layer including well layers and barrier layers disposed between the active layer and the cladding layers or disposed in the cladding layers close to the active layer, wherein the well and barrier layers have a high reflectivity with respect to the electrons and holes at a position close to .GAMMA.-point in the reciprocal lattice space, and also the well and barrier layers have a high reflectivity with respect to the electrons and holes at a position close to at least one of the primary symmetrical points.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully