Method for making silicon-germanium devices using germanium implantation
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United States of America Patent
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Jun 20, 1995
Grant Date -
N/A
app pub date -
Apr 9, 1992
filing date -
Apr 9, 1992
priority date (Note) -
Expired
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Abstract
Silicon-germanium devices including MOSFETs, photogates and photodiodes, are produced by implanting the Si or polycrystalline silicon substrate with Ge.sup.+, to realize active SiGe regions within Si which are substantially free from defects, at an appropriate point in the fabrication by conventional techniques.
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