Fabry-perot modulator
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United States of America Patent
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Jun 20, 1995
Issued Date -
N/A
app pub date -
Feb 14, 1994
filing date -
Feb 23, 1989
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Abstract
An asymmetric Fabry-Perot modulator comprises a multiple quantum well (MQW) p-i-n diode (8, 10, 12) defined by a front surface of reflectivity 0.3 and back surface of reflectivity 0.95. The cavity length L is such that resonance occurs close to the long wavelength side of the unbiased MQW absorption edge so that application of a bias signal to the MQW (12) causes the reflectivity of the cavity to become close to zero. This arrangement provides a high contrast modulator less sensitive to temperature variations and deviations from ideal reflectivities of the front and back surfaces than high-finesse Fabry-Perot modulators.
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