Importance

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Abstract

A method for reaction bonding surfaces at low temperatures in which polished and cleaned surfaces are bombarded with a mixture of oxygen and fluorine ions to produce activated surfaces. The activated surfaces are then cleaned to remove particulates, then contacted at room temperature to affect a reaction bond therebetween. The bond energy of the reaction bonded surfaces increase with time at room temperature. The rate at which the bond energy of the reaction bonded surfaces increases may be enhanced by moderate heating at a low temperature below a temperature which would be detrimental to any part of the reaction bonded structure. A satisfactory bond energy for silicon wafers can be achieved in four hours at room temperature and in less than 10 minutes at 50.degree. C.

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First Claim