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Abstract

An apparatus for the reactive coating of a substrate 1, with silicon dioxide (SiO.sub.2) for example, comprises a power source 10, 37 connected to an electrode 5 which is disposed in an evacuable coating chamber 15, 15a and interacts with a target 3 which is sputtered and the sputtered particles of which are deposited on the substrate 1, wherein argon and oxygen, for example, are supplied to the coating chamber 15, 15a. The target to be sputtered is composed of several parts, for example. A center part 3a of the target 3 opposite the substrate 1 is made of silicon (Si) and the part 3b surrounding this center portion is made of zinc (Sn), for example. Provision is made for a diaphragm 24 between the substrate 1 on the one hand, and the target 3, on the other hand. The shape of the magnetic field of the electrode 5 during the sputtering generates a sputtering of the more reactive target material 3a in the oxidic mode and of the less reactive target material 3b in the metallic mode.

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First Claim