Process for fabricating a metallization structure in a semiconductor device
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United States of America Patent
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Jul 4, 1995
Grant Date -
N/A
app pub date -
Feb 3, 1994
filing date -
Feb 3, 1994
priority date (Note) -
Expired
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Abstract
A process for fabricating a metallization structure includes the formation of an interlayer (20) using an MOCVD deposition process. A metal-organic precursor, having as one component tungsten, is used to deposit the interlayer (20) onto a surface region (18) of a substrate (10) at the bottom of an opening (16). The MOCVD deposition process forms a conformal layer which evenly coats all surfaces of the opening (16). Next, a refractory metal layer (22) is deposited to overlie the interlayer (20). Because of conformal nature of the MOCVD deposition process, refractory metal layer can be formed using corrosive gasses such as tungsten hexafluoride.
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