Method of forming thin film for semiconductor device
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United States of America Patent
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Jul 4, 1995
Issued Date -
N/A
app pub date -
Jun 11, 1993
filing date -
Aug 3, 1989
priority date (Note) -
Expired
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Abstract
A method of forming a thin film for a semiconductor device, for forming a metal thin film by chemical vapor deposition on an intermediate layer which is provided on a substrate, comprises the steps of activating the surface of the intermediate layer by introducing a halide gas of a metal for forming the thin film onto the surface of the intermediate layer, forming nuclei on the surface of the intermediate layer by introducing a silane-system gas onto the activated surface of the intermediate layer, and introducing the halide gas and a reducing gas onto the surface of the intermediate layer formed with the nuclei, thereby depositing the metal thin film on the surface of the intermediate layer.
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